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10W 800nm 200um COS AuSn bonding Laser Diode Module
C8081010W10
Diode Laser808nm
SkyEra delivers TY-808±3nm-10.0W-25C-DG-01 chip on submount diode lasers, employing AuSn bonding and P Down package with multiple advantages of high reliability, stable output power, high power, high efficiency, long lifetime and high compatibility, and are widely applied in the market.
- Overview
- Parameters
- Technical Archive
Features:
l Chip on submount design
l P Down sealed package
l High stability
l Long lifetime
l High reliability
l AuSn bonding
l RoHS compliance
Application:
l Medical
l Printing
l Industry
l Pumping
Parameters | Min | Typ | Max | Unit | Conditions |
Output Power | - | 10 | - | W |
|
Center Wavelength Polaris | 805 803 | 808 808 | 811 813 | nm |
|
Spectral Width (FWHM) | - | 2.5 | - | nm |
|
Spectral Width (90%) | - | 6.0 | - | nm |
|
Fast-Axis Divergence (95%) | - | 64 | 68 | ° | Collimating |
Fast-Axis Divergence (FWHM) | - | 33 | 35 | ° |
|
Slow-Axis Divergence (95%) | - | 9 | 10 | ° |
|
Slow-Axis Divergence (FWHM) | - | 7 | 8 | ° |
|
Polarization Mode TE/(TE+TM) | 95 | - | - | % |
|
Wavelength Tuning vs. Temperature | - | 0.35 | - | nm/℃ |
|
Emitter Size | 185 | 190 | 195 | μm |
|
Threshold Current | - | 1.35 | 1.5 | A |
|
Operating Current | - | 9.5 | 10.5 | A |
|
Operating Voltage | - | 1.85 | 2.0 | V |
|
Power Conversion Efficiency | - | 55 | - | % |
|
Slop Efficiency | - | 1.2 | - | W/A |
|
Storage Temperature | 0 | 25 | 80 | °C |
|
Operating Temperature | 15 | 25 | 55 | °C |
|
Apparent Size | 4.5x5.75x0.482 | mm |
| ||
