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6W 808nm 105um COS AuSn bonding Laser Diode Module

6W 808nm 105um COS AuSn bonding Laser Diode Module

C80806W03

Diode Laser808nm

SkyEra delivers TY-808±5nm-06.0W-25C-DG-01 chip on submount diode lasers, employing AuSn bonding and P Down package with multiple advantages of high reliability, stable output power, high power, high efficiency, long lifetime and high compatibility, and are widely applied in the market.

  • Overview
  • Parameters
  • Technical Archive

Features:

l  Chip onsubmount design

l  P Downsealed package

l  Highstability

l  Longlifetime

l  Highreliability

l  AuSnbonding

l  RoHScompliance


Application:

l  Medical

l  Printing

l  Industry

l  Pumping


Parameters

Min

Typ

Max

Unit

Conditions

Output Power

-

6

-

W

 

Center Wavelength

Polaris

805

803

808

808

811

813

nm

 

Spectral Width (FWHM)

-

2.5

-

nm

 

Spectral Width (90%)

-

6.0

-

nm

 

Fast-Axis Divergence (95%)

-

64.0

-

°

Fast-Axis Divergence (FWHM)

-

29.5

-

°

 

Fast-Axis Divergence (95%)

-

8.5

-

°

 

Fast-Axis Divergence (FWHM)

-

6.0

-

°

 

Polarization Mode

-

TE

-

-

 

Wavelength Tuning vs. Temperature

-

0.3

-

nm/

 

Emitter Size

-

105

-

μm

 

Threshold Current

-

0.75

-

A

 

Operating Current

-

6.0

6.5

A

 

Operating Voltage

-

1.75

2.0

V

 

Power Conversion Efficiency

-

55

-

%

 

Slop Efficiency

-

1.2

-

W/A

 

Storage Temperature

0

-

80

°C

 

Operating Temperature

15

-

55

°C

 

Apparent Size

4.5x5.75x0.482

mm

 


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