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10W 808nm 190um COS AuSn bonding Laser Diode Module
C8080510W01
Diode Laser808nm
SkyEra delivers TY-808±5nm-10.0W-25C chip on submount diode lasers, employing AuSn bonding and P Down package with multiple advantages of high reliability, stable output power, high power, high efficiency, long lifetime and high compatibility, and are widely applied in the market.
- Overview
- Parameters
- Technical Archive
Key Parameters:
l Chip onsubmount design
l P Downsealed package
l Highstability
l Longlifetime
l Highreliability
l AuSnbonding
l RoHScompliance
Application:
l Medical
l Printing
l Industry
l Pumping
Parameters | Min | Typ | Max | Unit | Conditions |
Output Power | 10 |
|
| W |
|
Center Wavelength | 805 803 | 808 808 | 811 813 | nm |
|
Spectral Width(FWHM) | - | 3.5 | - | nm |
|
Spectral Width(90%) | - | 6 | - | nm |
|
Fast-Axis Divergence | - | 60 | - | ° | Collimating |
Fast-Axis Divergence(FWHM) | - | 30 | - | ° |
|
Slow-Axis Divergence | - | 11 | - | ° |
|
Slow-Axis Divergence(FWHM) | - | 10 | - | ° |
|
Polarization Mode | - | TM | - | - |
|
Wavelength Tuning vs. Temperature | - | 0.28 | - | nm/℃ |
|
Emitter Size | - | 190 | - | μm |
|
Threshold Current | - | 1.5 | 1.7 | A |
|
Operating Current | - | 11.0 | 12.0 | A |
|
Operating Voltage | - | 1.84 | 2.0 | V |
|
Power Conversion Efficiency | - | 50 | - | % |
|
Slop Efficiency | - | 1.06 | - | W/A |
|
Storage Temperature | 0 | - | 80 | °C |
|
Operating Temperature | 15 | - | 55 | °C |
|
Apparent Size | 4.5x5.75x0.5 | mm |
| ||
