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5W 808nm 200um COS AuSn bonding Laser Diode Module

5W 808nm 200um COS AuSn bonding Laser Diode Module

C80805W01

Diode Laser808nm

SkyEra delivers TY -808±3nm-5.0W-25C-COS-200 chip on submount diode lasers, employing AuSn bonding and P Down package with multiple advantages of high reliability, stable output power, high power, high efficiency, long lifetime and high compatibility, and are widely applied in the market.

  • Overview
  • Parameters
  • Technical Archive

Key Parameters:

l  Chip onsubmount design

l  P Downsealed package

l  Highstability

l  Longlifetime

l  Highreliability

l  AuSnbonding

l  RoHScompliance

 

Application:

l  Medical

l  Printing

l  Industry

l  Pumping

Parameters

Min

Typ

Max

Unit

Conditions

Output Power

5

 

 

W

 

Center Wavelength

805

803

808

808

811

813

nm

 

Spectral Width(FWHM)

-

3.0

-

nm

 

Spectral Width(90%)

-

6

-

nm

 

Fast-Axis Divergence

-

62

-

°

Collimating

Fast-Axis Divergence(FWHM)

-

31

-

°

 

Slow-Axis Divergence

-

10

-

°

 

Slow-Axis Divergence(FWHM)

-

8

-

°

 

Polarization Mode

-

TE

-

-

 

Wavelength Tuning vs. Temperature

-

0.28

-

nm/℃

 

Emitter Size

-

200

-

μm

 

Threshold Current

-

1.1

-

A

 

Operating Current

-

5.0

5.5

A

 

Operating Voltage

-

1.8

2.1

V

 

Power Conversion Efficiency

-

58

-

%

 

Slop Efficiency

-

1.2

-

W/A

 

Storage Temperature

0

-

80

°C

 

Operating Temperature

15

-

55

°C

 

Apparent Size

4.5x5.75x0.5

mm

 


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