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5W 808nm 200um COS AuSn bonding Laser Diode Module
C80805W01
Diode Laser808nm
SkyEra delivers TY -808±3nm-5.0W-25C-COS-200 chip on submount diode lasers, employing AuSn bonding and P Down package with multiple advantages of high reliability, stable output power, high power, high efficiency, long lifetime and high compatibility, and are widely applied in the market.
- Overview
- Parameters
- Technical Archive
Key Parameters:
l Chip onsubmount design
l P Downsealed package
l Highstability
l Longlifetime
l Highreliability
l AuSnbonding
l RoHScompliance
Application:
l Medical
l Printing
l Industry
l Pumping
Parameters | Min | Typ | Max | Unit | Conditions |
Output Power | 5 |
|
| W |
|
Center Wavelength | 805 803 | 808 808 | 811 813 | nm |
|
Spectral Width(FWHM) | - | 3.0 | - | nm |
|
Spectral Width(90%) | - | 6 | - | nm |
|
Fast-Axis Divergence | - | 62 | - | ° | Collimating |
Fast-Axis Divergence(FWHM) | - | 31 | - | ° |
|
Slow-Axis Divergence | - | 10 | - | ° |
|
Slow-Axis Divergence(FWHM) | - | 8 | - | ° |
|
Polarization Mode | - | TE | - | - |
|
Wavelength Tuning vs. Temperature | - | 0.28 | - | nm/℃ |
|
Emitter Size | - | 200 | - | μm |
|
Threshold Current | - | 1.1 | - | A |
|
Operating Current | - | 5.0 | 5.5 | A |
|
Operating Voltage | - | 1.8 | 2.1 | V |
|
Power Conversion Efficiency | - | 58 | - | % |
|
Slop Efficiency | - | 1.2 | - | W/A |
|
Storage Temperature | 0 | - | 80 | °C |
|
Operating Temperature | 15 | - | 55 | °C |
|
Apparent Size | 4.5x5.75x0.5 | mm |
| ||
